收藏本站
LHF08CTE
6.2.8 BLOCK ERASE, BYTE WRITE AND LOCK-BIT CONFIGURATION PERFORMANCE (3,4)
V CC =3.3V±0.3V, T A =-40°C to +85°C
39
Sym.
Parameter
Notes
V PP =3.3V
Typ. (1) Max.
V PP =5V
Typ. (1) Max.
V PP =12V
Typ. (1) Max.
Unit
t WHQV1
t EHQV1
t WHQV2
t EHQV2
t WHQV3
t EHQV3
t WHQV4
t EHQV4
t WHRH1
t EHRH1
t WHRH2
t EHRH2
Byte Write Time
Block Write Time
Block Erase Time
Set Lock-Bit Time
Clear Block Lock-Bits Time
Byte Write Suspend Latency
Time to Read
Erase Suspend Latency
Time to Read
2
2
2
2
2
19
1.2
0.8
21
1.8
7.1
15.2
300
4
6
300
6
10
21.1
10
0.7
0.4
13.3
1.2
6.6
12.3
150
2
5
150
5
9.3
17.2
7
0.5
0.3
11.6
1.1
7.4
12.3
125
1.5
4
125
4
10.4
17.2
μs
s
s
μs
s
μs
μs
V CC =5V±0.5V, 5V±0.25V, T A =-40°C to +85°C
Sym.
Parameter
Notes
V PP =5V
Typ. (1) Max.
V PP =12V
Typ. (1) Max.
Unit
t WHQV1
t EHQV1
t WHQV2
t EHQV2
t WHQV3
t EHQV3
t WHQV4
t EHQV4
t WHRH1
t EHRH1
t WHRH2
t EHRH2
Byte Write Time
Block Write Time
Block Erase Time
Set Lock-Bit Time
Clear Block Lock-Bits Time
Byte Write Suspend Latency Time to
Read
Erase Suspend Latency Time to Read
2
2
2
2
2
8
0.5
0.4
12
1.1
5.6
9.4
150
1.5
5
150
5
7
13.1
6
0.4
0.3
10
1
5.2
9.8
100
1
4
100
4
7.5
12.6
μs
s
s
μs
s
μs
μs
NOTES:
1. Typical values measured at T A =+25°C and nominal voltages. Assumes corresponding lock-bits are not set.
Subject to change based on device characterization.
2. Excludes system-level overhead.
3. Sampled but not 100% tested.
4. Block erase, byte write and lock-bit configuration operations with V CC <3.0V and/or V PP <3.0V are not
guaranteed.
Rev. 1.3
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
LH28F160S3HNS-TV IC FLASH 16MBIT 100NS 56SSOP
LH28F160S5HNS-S1 IC FLASH 16MBIT 70NS 56SSOP
LH28F320S3HNS-ZM IC FLASH 32MBIT 110NS 56SSOP
LH28F320SKTD-ZR IC FLASH 32MBIT 70NS 48TSOP
LHF00L28 IC FLASH 16MBIT 70NS 48TSOP
LPM409 CHASSIS STNRD 4SLOT CHASSIS W/INPUT LEAD
LS15RB1201J04 POE SPLITTER 10.8W 12V @0.9A
LT1932ES6#TRMPBF IC LED DRIVR WHITE BCKLGT TSOT-6
相关代理商/技术参数
LH28F008SCHT-TL12 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM
LH28F008SCHT-TL15 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM
LH28F008SCHT-V12 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM
LH28F008SCHT-V85 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM
LH28F008SCH-V 制造商:SHARP 制造商全称:Sharp Electrionic Components 功能描述:8-MBIT(1 MB x 8) SmartVoltage Flash MEMORY
LH28F008SCL-12 制造商:SHARP 制造商全称:Sharp Electrionic Components 功能描述:Flash Memory 8M (1M 】8)
LH28F008SCL-85 制造商:SHARP 制造商全称:Sharp Electrionic Components 功能描述:Flash Memory 8M (1M 】8)
LH28F008SCN-12 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM